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| BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A (Z) 2nd. Edition Nov. 1998 Features * Build in Biasing Circuit; To reduce using parts cost & PC board space. * High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is "CX-". 2. BB403M is individual type number of HITACHI BBFET. BB403M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 7 - 0/ +7 - 0/ +7 25 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Symbol Min 7 +7 +7 -- -- 0.3 0.5 9 35 Typ -- -- -- -- -- 0.6 0.8 14 42 Max -- -- -- +100 +100 0.9 1.1 20 50 Unit V V V nA nA V V mA mS Test Conditions I D = 200A VG1S = VG2S = 0 I G1 = +10A VG2S = VDS = 0 I G2 = +10A VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100A VDS = 5V, VG1S = 5V I D = 100A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 470k VDS = 5V, VG1 = 5V VG2S =4V RG = 470k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 470k f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 470k Noise figure Power gain NF1 PG2 -- 12 1.0 16.5 1.6 -- dB dB f = 200MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 470k Noise figure NF2 -- 2.85 3.7 dB f = 900MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance V(BR)G1SS V(BR)G2SS I G1SS I G2SS VG1S(off) VG2S(off) I D(op) |yfs| Input capacitance Output capacitance Reverse transfer capacitance Power gain c iss c oss c rss PG1 2.6 1.7 -- 28 3.3 2.1 0.025 32 4.0 2.5 0.05 -- pF pF pF dB 2 BB403M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 A ID Drain Source Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50) L1 1000p 36p 1000p 47k BBFET L2 1000p 47k Output(50) 10p max 1000p 1SV70 RG 470k RFC 1SV70 1000p V D = V G1 Unit Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB403M 900MHz Power Gain, Noise Test Circuit VG1 VG2 C4 C5 VD C6 R1 R2 C3 G2 R3 D L3 RFC Output L4 Input L1 L2 G1 S C1 C2 C1, C2 C3 C4 to C6 R1 R2 R3 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 470 k 47 k 4.7 k L1: 10 L2: 8 26 3 3 (1mm Copper wire) Unit : mm 10 25 L3: 7 L4: 29 10 7 18 10 RFC : 1mm Copper wire with enamel 4turns inside dia 6mm 4 BB403M Maximum Channel Power Dissipation Curve Typical Output Characteristics 25 I D (mA) 18 0k 22 27 0 k 0 k Pch (mW) 200 V G2S = 4 V V G1 = VDS 20 R 150 Channel Power Dissipation 15 100 Drain Current 10 k 30 3k 0 39 0k 47 k 0 56 k 80 6 G= 50 5 1 M 820 k 1.5 M 2.2 M 0 50 100 150 Ta (C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 V DS (V) 5 25 I D (mA) Drain Current vs. Drain to Source Voltage VG2S = 4 V Drain Current vs. Gate1 to Source Voltage 25 V DS = 5 V I D (mA) 20 3.5 V 3V 4V 2.5 V 2V 1.5 V 1.4 V 1.3 V 20 15 Drain Current 1.2 V 1.1 V 1.0 V 15 1.5 V 10 Drain Current 10 5 VG1S = 0.9 V 5 VG2S = 1 V 0 1 2 3 Drain to Source Voltage 4 V DS 5 (V) 0 4.0 8.0 1.2 Gate1 to Source Voltage 1.6 2.0 VG1S (V) 5 BB403M Drain Current vs. Gate2 to Source Voltage V DS = 5 V RG = 470 k 20 I D (mA) 20 Drain Current vs. Gate1 Voltage V DS = 5 V VG2S = 4 V R G = 470 k V 12 G1 I D (mA) Drain Current 16 Drain Current V =5 V 4.5 4V V 3.5 3V 16 12 8 8 4 4 0 1 2 3 Gate2 to Source Voltage 4 VG2S (V) 5 0 1 2 3 4 Gate1 Voltage V G1 (V) 5 Drain Current vs. Gate1 Current 25 I D (mA) (A) V DS = 5 V VG2S = 4 V 50 Gate1 Current vs. Gate1 to Source Voltage V DS = 5 V 20 40 4 V 3.5 V 15 I G1 30 2V Drain Current 10 Gate1 Current 3V 2.5 V 20 5 10 1.5 V VG2S = 1 V 0 10 20 Gate1 Current 30 I G1 40 (A) 50 0 0.4 0.8 1.2 Gate1 to Source Voltage 1.6 2.0 V G1S (V) 6 BB403M Gate1 Current vs. Gate2 to Source Voltage Forward Transfer Admittance |y fs | (mS) 10 (A) V DS = 5 V RG = 470 k VG1 = 5 V 50 Forward Transfer Admittance vs. Drain Current V DS = 5 V 3.5 V 4V 3V 2.5 V 8 40 4.5 V 6 I G1 4V 3.5 V 3V 2.5 V 2V 30 Gate1 Current 4 20 2 10 VG2S = 2 V 0 1.0 2.0 3.0 Gate2 to Source Voltage 4.0 5.0 V G2S (V) 0 5 10 15 20 Drain Current I D (mA) 25 Forward Transfer Admittance |y fs | (mS) 50 Forward Transfer Admittance vs. Gate1 Voltage V DS = 5 V RG = 470 k 40 35 Power Gain PG (dB) 30 25 20 15 Power Gain vs. Gate Resistance 40 VG2S = 4 V 3V 30 2V 20 10 1V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 10 0.1 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 0.2 0.5 1 2 5 10 Gate Resistance R G (M ) 7 BB403M Noise Figure vs. Gate Resistance 40 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 35 30 25 20 15 0 0.1 10 0 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz 5 10 15 20 25 30 Power Gain vs. Drain Current 4 Noise Figure NF (dB) 3 2 1 0.2 0.5 1 2 5 10 Gate Resistance R G (M W ) Power Gain PG (dB) Drain Current I D (mA) Noise Figure vs. Drain Current 4 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz 20 Power Gain vs. Gate Resistance Noise Figure NF (dB) Power Gain PG (dB) 3 15 2 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 0.2 0.5 1 2 5 10 Gate Resistance R G (M W ) 1 5 0 5 10 15 20 25 30 0 0.1 Drain Current I D (mA) 8 BB403M Noise Figure vs. Gate Resistance Power Gain vs. Drain Current 20 4 Noise Figure NF (dB) 3 Power Gain PG (dB) 15 2 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 0.2 0.5 1 2 5 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 900 MHz 5 10 15 20 25 30 1 5 0 0.1 0 Gate Resistance R G (M W ) Drain Current I D (mA) Noise Figure vs. Drain Current 4 Gain Reduction GR (dB) 60 50 40 30 20 10 0 0 Gain Reduction vs. Gate2 to Source Voltage V DS = V G1 = 5 V V G2S = 4 V R G = 470 k W f = 200 MHz Noise Figure NF (dB) 3 2 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 900 MHz 5 10 15 20 25 30 1 0 Drain Current I D (mA) 1 2 3 5 4 Gate2 to Source Voltage V G2S (V) 9 BB403M Gain Reduction vs. Gate2 to Source Voltage 50 35 V DS = V G1 = 5 V V G2S = 4 V R G = 470 k W f = 900 MHz Drain Current vs. Gate Resistance V DS = 5 V V G1 = 5 V V G2S = 4 V Gain Reduction GR (dB) 40 Drain Current I D (mA) 30 25 20 15 10 5 30 20 10 0 1 2 3 4 5 Gate2 to Source Voltage V G2S (V) 0 0.1 0.2 0.5 1 2 5 Gate Resistance R G (M W) 10 Input Capacitance vs. Gate2 to Source Voltage 4 Input Capacitance Ciss (pF) 3 2 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = 470 k W f = 1 MHz 1 2 3 4 1 0 Gate2 to Source Voltage V G2S (V) 10 BB403M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Zo =50 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Zo =50 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Zo =50 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Zo =50 50 to 1000 MHz (50 MHz step) 11 BB403M Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 470k, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.947 0.978 0.973 0.960 0.956 0.939 0.930 0.905 0.889 0.870 0.855 0.841 0.826 0.812 0.799 0.788 0.778 0.765 0.763 0.748 ANG -7.0 -11.9 -18.7 -23.8 -29.6 -35.5 -40.3 -45.7 -50.3 -55.6 -59.6 -63.9 -67.9 -71.8 -75.6 -78.9 -82.6 -85.8 -88.8 -92.2 S21 MAG 4.11 4.13 4.04 4.01 3.90 3.85 3.68 3.63 3.45 3.35 3.22 3.10 3.02 2.89 2.78 2.70 2.60 2.48 2.41 2.34 ANG 174.4 167.1 159.8 152.7 146.4 139.9 133.6 128.3 122.7 116.6 111.5 106.3 101.4 96.1 91.8 87.5 82.2 78.1 74.2 69.7 S12 MAG 0.00400 0.00305 0.00266 0.00384 0.00453 0.00440 0.00550 0.00571 0.00583 0.00634 0.00596 0.00591 0.00544 0.00533 0.00495 0.00470 0.00460 0.00445 0.00486 0.00502 ANG 89.0 116.5 75.5 66.8 70.1 59.6 67.2 59.0 54.2 51.6 56.2 55.7 54.9 57.2 64.6 66.5 75.1 83.8 97.0 102.6 S22 MAG 0.985 0.985 0.982 0.978 0.970 0.965 0.957 0.949 0.940 0.932 0.924 0.917 0.908 0.900 0.893 0.887 0.880 0.874 0.869 0.864 ANG -3.1 -6.8 -10.1 -13.5 -16.8 -20.0 -23.1 -26.2 -29.2 -32.1 -35.0 -37.7 -40.5 -43.1 -45.7 -48.1 -50.6 -52.9 -55.3 -57.5 12 BB403M Package Dimensions Unit: mm 2.95 0.2 0.65 0.1 1.9 0.2 0.95 0.95 0.4 - 0.05 + 0.1 0.4 - 0.05 + 0.1 0.16 - 0.06 + 0.1 4 3 0.15 2.8 0.2 0 ~ 0.1 1 0.6 - 0.05 0.85 + 0.1 2 0.4 - 0.05 0.95 + 0.1 1.8 0.8 1.1 0.1 0.65 0.1 1.5 Hitachi Code EIAJ JEDEC MPAK-4R -- -- 13 BB403M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 14 |
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